2SB1317 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1317 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A
VBE
Base-emitter on voltage
IC=-8A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-8A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V;f=1MHz
COB
Collector output capacitance
IE=0;f=1MHz;VCB=-10V
hFE-2 classifications
Q
S
P
60-120 80-160 100-200
Product Specification
2SB1317
MIN TYP. MAX UNIT
-2.5
V
-1.8
V
-50 μA
-50 μA
20
60
200
20
20
MHz
450
pF
2
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