2SB1386 데이터 시트보기 (PDF) - Weitron Technology

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2SB1386

Epitaxial Planar Transistor

Weitron Technology 

Epitaxial Planar Transistor

PNP Silicon

MAXIMUM RATINGS (Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation FR-5 Board(1)

TA =25 C

Derate above 25 C

Thermal Resistance, Junction Ambient

Junction and Storage, Temperature

Device Marking

2SB1386=

Symbol

PD

R θJA

TJ, Tstg

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Emitter Breakdown Voltage(IC =-1 mAdc, IB=0)

Collector-Base Breakdown Voltage(IC =-50 uAdc, IE=0)

Emitter-Base Breakdown Voltage(IE =-50 uAdc, IC =0)

Collector Cufoff Current(VCB=-20Vdc, IE=0)

Emitter Cufoff Current(VEB =-5Vdc, IC=0)

1. FR-5=1.0 I I0.75I I0.062 in

2SB1386

COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT-23

Value

-20

-30

-6.0

Value

150

0.5

833

-55 to +150

Unit

Vdc

Vdc

Vdc

mAdc

Unit

mW

mW/ C

C/W

C

Symbol

Min Max

Unit

V(BR)CEO

-20

-

Vdc

V(BR)CBO

-30

-

Vdc

V(BR)EBO

-6.0

-

Vdc

ICBO

IEBO

-

-0.5

uAdc

-

-0.5

uAdc

WEITRON

http://www.weitron.com.tw

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