2SB1386 데이터 시트보기 (PDF) - Weitron Technology

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2SB1386

Epitaxial Planar Transistor

Weitron Technology 

2SB1386

-10

-5

VCE =2V

-2

-1

-500m

Ta =100 C

25 C

25 C

-200m

-100m

-50m

-20m

-10m

-5m

-2m

-1m

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4

BASE TO EMITTER VOLTAGE : VBE (V)

FIG.1 Grounded Emitter Propagation

Characteristics

5k

Ta =25 C

2k

1k

500

200

VCE =5V

100

2V

50

1V

20

10

5

-1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.3 DC Current Gain vs.

Collector Current

5k

VCE =2V

2k

1k

500

200

100

Ta =100 C

25 C

50

25 C

20

10

5

-1m-2m -5m-0.01-0.02-0.05-0.1-0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.5 DC Current Gain vs.

Collector Current

WEITRON

http://www.weitron.com.tw

-5 50mA

45mA

40mA

-4 35mA

-3

-2

-1

30mA

Ta =25 C

25mA

20mA

15mA

10mA

5mA

IB =0A

0

0 -0.4 -0.8 -1.2 -1.6 -2.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

FIG.2 Grounded Emitter Output

Characteristics

5k

VCE =1V

2k

1k

500

200

100

Ta =100 C

25 C

50

25 C

20

10

5

-1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.4 DC Current Gain vs.

Collector Current

-5

-2

-1

-0.5

-0.2

-0.1

-0.05

Ta =25 C

IC /IB 50/1

40//11

30/1

10/1

-0.02

-0.01

-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.6 Collector-Emitter Saturation

Voltage vs. Collector Current

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