2SB561 데이터 시트보기 (PDF) - Renesas Electronics

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2SB561

Silicon PNP Epitaxial

Renesas Electronics 

2SB561

Electrical Characteristics

Item

Symbol Min Typ Max

Collector to base breakdown voltage

V(BR)CBO

–25

—

—

Collector to emitter breakdown voltage V(BR)CEO –20

—

—

Emitter to base breakdown voltage

V(BR)EBO

–5

—

—

Collector cutoff current

DC current transfer ratio

ICBO

—

— –1.0

hFE*1

85

—

240

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

Collector output capacitance

VCE(sat)

VBE

fT

Cob

— –0.2 –0.5

— –0.75 –1.0

—

350

—

—

20

—

Note: 1. The 2SB561 is grouped by hFE as follows.

B

C

85 to 170 120 to 240

Unit

V

V

V

µA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

VCE = –1 V,

IC = –0.15 A (Pulse test)

IC = –0.5 A, IB = –0.05 A

VCE = –1 V, IC = –0.15 A

VCE = –1 V, IC = –0.15 A

VCB = –10 V, IE = 0

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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