B595R 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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B595R Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB595
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SD525
·High breakdown voltage :VCEO=-100V
·Low collector saturation volage
: VCE(sat)=-2.0V(Max)
APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IE
Emitter current
IB
Base current
PC
Collectorl power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-100
-100
-5
-5
-5
-4
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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