2SB566 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SB566

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB566 2SB566A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage IC=-10µA ; IE=0

V(BR)CEO

Collector-emitter

breakdown voltage

2SB566

2SB566A

IC=-50mA; RBE==

V(BR)EBO Emitter-base breakdown votage

IE=-10µA; IC=0

VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A

VBEsat

Base-emitter saturation voltage

IC=-2 A;IB=-0.2 A

ICBO

Collector cut-off current

VCB=-50V; IE=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-4V

hFE-2

DC current gain

IC=-1A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-4V

Switching times

ton

Turn-on time

toff

Turn-off time

tstg

Storage time

IC=-0.5A ; VCC=-10.5V

IB1=-IB2=-0.05 A

hFE-2 classifications

B

C

60-120

100-200

MIN TYP. MAX UNIT

-70

V

-50

V

-60

-5

V

-1.0

V

-1.2

V

-1

µA

35

60

200

15

MHz

0.3

µs

3.0

µs

2.5

µs

2

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