2SB834 데이터 시트보기 (PDF) - Weitron Technology
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2SB834 Datasheet PDF : 3 Pages
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PNP Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
Features:
* DC Current Gain hFE = 60-200 @IC = 0.5A
* Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A
* Complememtary to NPN 2SD880
COLLECTOR
2
BASE
1
3
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25ºC)
Rating
Collector to Base Voltage
Symbol
VCBO
Collector to Emitter Voltage
VCEO
Collector to Base Voltage
VEBO
Collector Current
IC
Total Device Disspation
TA=25°C
PD
TC=25°C
Derate above 25°C
Junction Temperature
TJ
Storage Temperature
Tstg
2SB834
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER TO-220
Value
-60
-60
-7.0
-3.0
1.5
30
0.24
+150
-55 to +150
Unit
V
V
V
A
W
W/˚C
˚C
˚C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=-50mA, IB=0
Emitter-Base Breakdown Voltage
IE=-100µA, IC=0
Collector Cut-Off Current
VCB=-60V, IE=0
Emitter-Cut-Off Current
VEB=-7V, IC=0
Symbol Min
Max
Max
Unit
BVCBO
-60
-
-
V
BVCEO
-60
-
-
V
BVEBO -7.0
-
-
V
ICBO
-
-
-100
µA
IEBO
-
-
-100
µA
WEITRON
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http://www.weitron.com.tw
02-Feb-07
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