C1819M 데이터 시트보기 (PDF) - SavantIC Semiconductor

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C1819M

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1819M

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=100µA ;IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=100A ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=100µA ;IC=0

VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA

VBE

Base-emitter on voltage

IC=30mA ; VCE=10V

hFE-1

DC current gain

IC=5mA ; VCE=50V

hFE-2

DC current gain

IC=30mA ; VCE=10V

COB

Output capacitance

IE=0; VCB=30V;f=1MHz

fT

Transition frequency

IC=20mA ; VCE=30V

MIN TYP. MAX UNIT

300

V

300

V

7

V

1.5

V

1.2

V

50

250

30

5

pF

70

MHz

2

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