2SC1906 데이터 시트보기 (PDF) - Renesas Electronics

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2SC1906

Silicon NPN Epitaxial Planar

Renesas Electronics 

2SC1906

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

19

—

—

V IC = 3 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

2

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICBO

—

—

0.5

µA VCB = 10 V, IE = 0

DC current transfer ratio

hFE

40

—

—

VCE = 10 V, IC = 10 mA

Gain bandwidth product

fT

600 1000

—

MHz VCE = 10 V, IC = 10 mA

Collector output capacitance

Cob

—

1.0

2.0

pF VCB = 10 V, IE = 0, f = 1 MHz

Collector to emitter saturation voltage

VCE(sat)

—

0.2

1.0

V IC = 20 mA, IB = 4 mA

Base time constant

rbb’ • CC

—

10

25

ps VCB = 10 V, IC = 10 mA,

f = 31.8 MHz

Power gain

PG

—

33

—

dB VCE = 10 V, f = 45 MHz

IC = 5 mA

—

18

—

dB VCE = 10 V, f = 200 MHz

IC = 5 mA

Rev.2.00 Aug 10, 2005 page 2 of 6

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