2SC1946A 데이터 시트보기 (PDF) - Advanced Semiconductor
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2SC1946A Datasheet PDF : 1 Pages
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2SC1946A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2SC1946A is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
• High Common Emitter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
IC
8.0 A
VCE
16 V
VCB
36 V
PDISS
100 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.75 °C/W
PACKAGE STYLE .380" 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCES
IC = 25 mA
BVCEO
IC = 25 mA
BVEBO
IE = 5.0 mA
ICES
VCE = 15 V
hFE
VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
16
4.0
5.0
40
75
150
UNITS
V
V
V
mA
---
Cob
VCB = 15 V
f = 1.0 MHz
75
100
pF
GPE
VCC = 12.5 V
Pout = 30 W
f = 175 MHz
10
11
DB
η
60
70
%
ψ
VCC = 15.5 V
PIN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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