2SC2625 데이터 시트보기 (PDF) - Unisonic Technologies
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2SC2625 Datasheet PDF : 3 Pages
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2SC2625
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
14
12
10
8
6
4
2
0
0
Collector Output Characteristics
900mA
700mA
500mA
TC=25℃
300mA
200mA
IB =100mA
2
4
6
8
10 12 14
CollectorEmitter Voltage, VCE (V)
3
1
0.5
0.3
0.1
0.05
0.03
Base and Collector Saturation Voltage
VBE(sat)
TC=25℃
IC=5IB
VCE(sat )
0.01
0.03 0.05 0.1
0.3 0.5 1
3 5 10
CollectorCurrent, IC (A)
DC Current Gain
300
200
100
50
TC=120℃
30
25℃
-20℃
10
-40℃
5
3
VCE=5V
1
0.03 0.05 0.1
0.3 0.5 1
3 5 10
Collector Current, IC (A)
Safe Operating Area
30
TC=25℃
10 Single Pulse
5
3
1
0.5
0.3
50μs
100μs
200μs
500μs
PW=1ms
0.1
0.05
0.03
1
3 5 10 30 50 100 300 500
CollectorEmitter Voltage, VCE (V)
Switching Time
3
TC=25℃
t STG
IC=5IB1 =5IB2
1
0.5
tON
0.3
tF
0.1
0.3 0.5
1
3
5
10
CollectorCurrent, IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R214-009,B
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