2SC2979 데이터 시트보기 (PDF) - Renesas Electronics

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2SC2979

Silicon NPN Triple Diffused

Renesas Electronics 

2SC2979

Silicon NPN Triple Diffused

Application

High voltage, high speed and high power switching

Outline

TO-220AB

ADE-208-890 (Z)

1st. Edition

September 2000

1

23

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Base current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

IB

PC * 1

Tj

Tstg

1. Base

2. Collector

(Flange)

3. Emitter

Ratings

Unit

900

V

800

V

7

V

3

A

6

A

1.5

A

40

W

150

°C

–55 to +150

°C

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