2SC2979 데이터 시트보기 (PDF) - Renesas Electronics

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2SC2979

Silicon NPN Triple Diffused

Renesas Electronics 

2SC2979

Electrical Characteristics (Ta = 25°C)

Item

Collector to emitter sustain

voltage

Symbol Min

VCEO(sus)

800

VCEX(sus)

800

Typ

—

—

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE1

15

—

hFE2

7

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test

t on

—

—

t stg

—

—

tf

—

—

Max Unit

—

V

—

V

—

V

100 µA

100 µA

—

—

1.0 V

1.5 V

1.0 µs

3.0 µs

1.0 µs

Test conditions

IC = 0.2 A, RBE = ∞, L = 100

mH

IC = 3 A, IB1 = 0.9 A, IB2 = –0.6

A, VBE = –5.0 V, L = 180 µH,

Clamped

IE = 10 mA, IC = 0

VCB = 750 V, IE = 0

VCE = 650 V, RBE = ∞

VCE = 5 V, IC = 0.3 A*1

VCE = 5 V, IC = 1.5 A*1

IC = 0.75 A, IB = 0.15 A*1

IC = 1.5 A, IB1 = 0.3 A,

IB2 = –0.75 A, VCC ≅ 250 V

Maximum Collector Dissipation

Curve

60

40

20

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

10

3 iC(peak)

ICmax(Continuous)

1.0

0.3

0.1

0.03

0.01 Ta = 25°C, 1 Shot

0.003

0.001

1 3 10 30 100 300 1,000

Collector to emitter voltage VCE (V)

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