C3502 데이터 시트보기 (PDF) - Inchange Semiconductor

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C3502

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3502

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Vltage

IE= 10μA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB=B 2mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 20mA ;IB=B 2mA

ICBO

Collector Cutoff Current

VCB= 150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 10m A ; VCE= 10V

fT

Current-Gain—Bandwidth Product

IC= 10mA; VCE= 30V;

COB

Collector Capacitance

IE= 0; VCB= 30V;ftest = 1MHz

MIN TYP. MAX UNIT

200

V

200

V

5

V

0.6

V

1.0

V

0.1 μA

0.1 μA

40

320

150

MHz

1.7

pF

‹ hFE Classifications

C

D

E

F

40-80 60-120 100-200 160-320

isc Website：www.iscsemi.cn

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