2SC3830 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC3830

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A; IB=0.4A

ICBO

Collector cut-off current

VCB=600V ;IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=2A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=12V

COB

Output capacitance

f=1MHz ; VCB=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCC=200V; IC=2A

IB1=0.2A; IB2=-0.4A;

RL=100Ω

Product Specification

2SC3830

MIN TYP. MAX UNIT

500

V

0.5

V

1.3

V

1

mA

100 μA

10

30

8

MHz

45

pF

1.0 μs

4.5 μs

0.5 μs

2

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