2SC4702XV-TR-H(2011) 데이터 시트보기 (PDF) - Renesas Electronics

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2SC4702XV-TR-H
(Rev.:2011)

Silicon NPN Epitaxial

Renesas Electronics 

2SC4702

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

300

—

—

V IC = 10 μA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 300

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 μA, IC = 0

Collector cutoff current

ICBO

—

—

0.1

μA VCB = 250 V, IE = 0

Collector to emitter saturation voltage

VCE(sat)

—

—

0.5

V IC = 30 mA, IB = 3 mA

DC current transfer ratio

hFE

60

—

150

VCE = 6 V, IC = 2 mA

Gain bandwidth product

fT

—

80

— MHz VCE = 6 V, IC = 5 mA

Collector output capacitance

Cob

—

1.5

—

pF VCB = 10 V, IE = 0, f = 1 MHz

R07DS0275EJ0400 Rev.4.00

Mar 28, 2011

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