2SB817 데이터 시트보기 (PDF) - Tiger Electronic
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2SB817 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Ttransistors
Product specification
2SD1047 / 2SB817
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
160 V
Collector-Emitter Voltage
VCEO
140 V
Emitter-Base Voltage
VEBO
6.0 V
Collector Current
IC
12 A
Base Current
IB
1.2 A
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Ptot
100 W
Tj
150 oC
Tstg -55~150 oC
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICEO VCB=140V, IE=0
Emitter Cut-off Current
IEBO VEB=6V, IC=0
Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0
DC Current Gain
hFE1
hFE2
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=6.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=5.0A,IB=0.5A
Base-Emitter Voltage
VBE VCE=5.0V,IC=1.0A
Current Gain Bandwidth Product
fT VCE=5.0V,IC=1.0A
Collector Output Capacitance
COB VCB=-10V, IE=0, f=1MHz
Note : hfe1 Classification D: 60~120, E: 100~200
Min.
—
—
140
60
20
—
—
—
Typ.
—
—
—
—
—
—
—
15
300
Max. Unit
10 uA
10 uA
—
V
200
—
2.5 V
1.5 V
— MHz
pF
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