2SD1611 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1611 Datasheet PDF : 4 Pages
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Power Transistors
2SD1611
Silicon NPN triple diffusion planar type darlington
For power amplification
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
■ Features
• High forward current transfer ratio hFE
• High collector-base voltage (Emitter open) VCBO
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
500
V
Collector-emitter voltage (Base open) VCEO
400
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
6
A
Peak collector current
ICP
10
A
Collector power dissipation
PC
40
W
Ta = 25°C
1.3
Junction temperature
Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) VEBO IE = 0.1 A, IC = 0
Collector-emitter sustaining voltage * VCEO(SUS) IC = 2 A, L = 10 mH
Collector-base cutoff current (Emitter open) ICBO VCB = 350 V, IE = 0
Forward current transfer ratio
hFE VCE = 2 V, IC = 2 A
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.06 A
Base-emitter saturation voltage
VBE(sat) IC = 3 A, IB = 0.06 A
Transition frequency
fT
VCE = 10 V, IC = 1 A, f = 1 MHz
5
V
400
V
100 µA
500
1.5
V
2.5
V
15
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: VCEO(SUS) Test circuit
50 Hz/60 Hz
X
L
120 Ω
6V
Y
1Ω
15 V
G
Publication date: April 2003
SJD00206BED
1
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