2SD1978 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD1978

Silicon NPN Epitaxial/ Darlington

Hitachi -> Renesas Electronics 

2SD1978

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

E to C diode forward current

Symbol

VCBO

VCEO

VEBO

IC

ic (peak)

PC

Tj

Tstg

ID

Ratings

Unit

120

V

120

V

7

V

1.5

A

3.0

A

0.9

W

150

°C

–55 to +150

°C

1.5

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 120 —

voltage

Collector to emitter breakdown V(BR)CEO 120 —

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

VCE(sat)1

—

—

—

—

2000 —

—

—

VCE(sat)2

—

—

Base to emitter saturation

VBE(sat)1

—

—

voltage

VBE(sat)2

—

—

E to C diode forward voltage VD

—

—

Note: 1. Pulse test

Max Unit

—

V

—

V

—

V

1.0 µA

10

µA

30000

1.5 V

2.0 V

2.0 V

2.5 V

3.0 V

Test conditions

IC = 0.1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 100 V, IE = 0

VCE = 100 V, RBE = ∞

VCE = 3 V, IC = 1 A*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

ID = 1.5 A*1

2

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