D525O 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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D525O Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SB595
·High breakdown voltage :VCEO=100V
·Low collector saturation volage
: VCE(sat)=2.0V(Max)
APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IE
Emitter current
IB
Base current
PC
Collectorl power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
www.jmnic.com
2SD525
·
VALUE
100
100
5
5
5
0.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
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