D525O 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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D525O Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD525
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO
Collector-emitter breakdown voltage IC=50mA; IB=0
100
VEBO
Emitter-base breakdown votage
IE=10mA; IC=0
5
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A
VBE
Emitter-base voltage
IC=1A ; VCE=5V
ICBO
Collector cut-off current
VCB=100V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
40
hFE-2
DC current gain
IC=4A ; VCE=5V
20
fT
Transition frequency
IC=1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
hFE-1 classifications
R
O
40-80
70-140
Y
120-240
TYP.
MAX
2.0
1.5
100
1
240
UNIT
V
V
V
V
μA
mA
12
MHz
100
pF
JMnic
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