D965(2005) 데이터 시트보기 (PDF) - Unisonic Technologies

부품명

상세내역

제조사

D965
(Rev.:2005)

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SD965/A

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

2SD965

2SD965A

VCEO

20

30

V

V

Emitter-Base Voltage

VEBO

7

V

SOT-89

500

mW

Collector Dissipation

TO-92

PC

TO-252

750

mW

1

W

Collector Current

IC

5

A

Junction Temperature

Storage Temperature

TJ

150

℃

TSTG

-65 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO IC=100µA, IE=0

Collector-Emitter

Breakdown Voltage

2SD965

2SD965A BVCEO IC=1mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO IE=10µA, IC=0

Collector Cut-off Current

ICBO VCB=10V, IE=0

Emitter Cut-off Current

IEBO VEB=7V, IC=0

VCE=2V, IC=1mA

DC Current Gain(note)

hFE VCE=2V, IC=0.5A

VCE=2V, IC=2A

Collector-Emitter Saturation Voltage VCE(SAT) IC=3A, IB= 0.1A

Current Gain Bandwidth Product

fT VCE=6V, IC=50mA

Output Capacitance

Cob VCB=20V, IE=0, f=1MHz

MIN TYP MAX UNIT

40

V

20

V

30

V

7

V

100 nA

100 nA

200

230

800

150

1

V

150

MHz

50

pF

CLASSIFICATION OF hFE2

RANK

RANGE

Q

230-380

R

340-600

S

560-800

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R209-007,B

Share Link: