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UG1001M 데이터 시트보기 (PDF) - LiteOn Technology

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UG1001M
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UG1001M Datasheet PDF : 2 Pages
1 2
LITE-ON
SEMICONDUCTOR
UG1001M thru UG1007M
ULTRA FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Amperes
FEATURES
Glass passivated chip
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
Easily cleaned with Freon, Alcohol, Chlorothene and
similar solvents
Plastic material has UL flammabitily classification 94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.3 grams
Mounting position : Any
DO-41
A
B
A
C
D
DO-41
Dim.
Min.
Max.
A
25.4
-
B
4.10
5.20
C
0.71
0.86
D
2.00
2.70
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=55 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load(JEDEC Mothod)
SYMBOL
UG
1001M
VRRM
50
VRMS
35
VDC
50
V(AV)
IFSM
UG
1002M
100
70
100
UG
1003M
200
140
200
UG
1004M
400
280
400
1.0
30
UG
1005M
600
420
600
UG
1006M
800
560
800
UG
1007M
1000
700
1000
UNIT
V
V
V
A
A
Maximum forward Voltage at 1.0A DC
VF
1.0
1.3
1.7
V
Maximum DC Reverse Current
@TJ=25 C
at Rated DC Blocking Voltage
IR
@TJ=100 C
5
uA
100
Maximum Reverse Recovery Time(Note 1)
TRR
50
Typical Junction
Capacitance (Note 2)
CJ
20
75
ns
10
pF
Typical Thermal Resistance (Note 3)
R0JA
Storage / Operating Temperature Range
TSTG ,TJ
NOTES : 1.Test condition of TRR:IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Ambient.
40
-55 to +150
C/W
C
REV. 2, 01-Dec-2000, KDFC02

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