A733 데이터 시트보기 (PDF) - Willas Electronic Corp.

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A733

SOT-23 Plastic-Encapsulate PNP Transistors

Willas Electronic Corp. 

WILLAS

SO1T.0-A2S3URPFAlaCsE tMiOcU-NETnScCHaOpTsTKuYlaBAteRRTIErRaRnECsTiIsFItEoRrSs-20V- 200V

SOD-123+ PACKAGE

FM120-M

A733 THRU

FM1200-M

Pb Free Prod

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

TRANSISTO•RLo(PwNpoPw)er loss, high efficiency.

• High current capability, low forward voltage drop.

FEATURE• High surge capability.

• Guardring for overvoltage protection.

z Collecto•r-UBltarasheigVho-sltpaegeed switching.

z Pb-Free• Spilaiccoknaegpietaixsialapvlaanialar bchleip, metal silicon junction.

• Lead-free parts meet environmental standards of

RoHS proMdILu-cStTDfo-r19p5a0c0k/2in2g8 code suffix ”G”

Halogen• RHfroaeHloeSgeppnrrofordeudecutpcfrootrdfpuoacrct kfpoinragpcackocikdnienggsuccfofoidxde"eGsu"sffuixf"fHix" “H”

Mechanical data

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

• Epoxy : UL94-V0 rated flame retardant

Package outline

SOD-123H

SOT-23

0.146(3.7)

0.130(3.3)

1. BASE

2. EMITTER

3. COLLECTOR

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

Symbol

VCBO

VCEO

VEBO

IC

• Case : MPoaldreadmpelatesrtic, SOD-123H

Value

Unit

,

Co•lleTecrtomri-nBaalsse:PVlaotletadgteerminals, solderable per-6M0IL-STD-750 V

Method 2026

Collector-Emitter Voltage

-50

V

• Polarity : Indicated by cathode band

Em•itMteoru-Bntainseg PVoosltiatigoen : Any

-5

V

Co•llWecetoigrhCt u: Arrpepnrto-xCimonattienduo0u.0s11 gram

-150

mA

0.031(0.8) Typ.

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

PC

Collector Power Dissipation

200

mW

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Tj

Junction Temperature

150

Ratings at 25℃ ambient temperature unless otherwise specified.

℃

Tstg SinglSetophraagsee hTaelmf wpaevrea,tu60reHz, resistive of inductive lo-5a5d-.150

℃

For capacitive load, derate current by 20%

ELECTRICAL CHARACRATTEINRGISSTICS (Ta=25℃ SuYnMlBeOsLsFMo1t2h0-MeHrwFMi1s3e0-MsHpFeMc14i0fi-MeHdF)M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200

Marking Code

MaximumPaRreacmureretnetrPeak Reverse Voltage

12

13

14

SymboVlRRM Te2s0t cond3i0tions 40

15

16

18

10

115 120

50 Min 60 Typ 80 Max 100 Unit 150

200

ColleMcatxoimr-ubmaRseMSbrVeoaltkagdeown voltage

V(BR)CBOVRMS IC=1-45uA,IE=201

28

Maximum DC Blocking Voltage

VDC

20

30

40

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA , IB=0

Maximum Average Forward Rectified Current

IO

Emitter-base breakdown voltage

V(BR)EBO

IE= -50uA, IC=0

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

Collesucpteorrimcpuoste-od fofncrauterdrelonatd (JEDEC method)

ICBO

VCB= -60 V , IE=0

35 -60 42

56

70 V 105

140

50

60

80

-50

1.0

100

150

200

V

-5

V

30

-0.1 uA

EmitTteypriccaul Tt-hoefrfmcaul Rrreesnisttance (Note 2)

Typical Junction Capacitance (Note 1)

DC cOuprerreantintggTaeimnperature Range

ColleSctotroarg-eeTmeimttpeerrastuarteuRraantigoen voltage

IEBO RΘJA VEB= -5 V ,

CJ

IC=0

hFE TJ VCE= -6 V-,5I5C=to-+11m2A5

VCE(satT) STG IC= -100mA, IB=- 10mA

40

120

120

- 65 to +175

-0.18

-0.1 uA

4-7555 to +150

-0.3 V

Base-emitter voltageCHARACTERISTICS

VBE(oSn)YMBOLVFCME1=2-06-MVH,ICF=M-1130.0-MmHAFM140-MH FM150--M0H.5F8M160-M-0H.6F2M180-M-0H.F6M81100-MHVFM1150-MH FM1200-

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92

TranMsaitxiiomnumfreAqveuraegnecRyeverse Current at @T A=25℃ fT

VCE=-6V,IC=-10mA

IR

50 0.5

MHz

ColleRcatteodr DoCutBplouctkicngapVaolctaitgaence

@T A=125℃Cob

VCB=-10V,IE=0,f=1MHZ

104.5

7

pF

NOTES:

Nois1e- Mfiegausurreed at 1 MHZ and applied reverse voltage of 4.0NVFDC.

2- Thermal Resistance From Junction to Ambient

VCE=-6V,IC=-0.3mA,

Rg=10kΩ,f=100HZ

6

20

dB

CLASSIFICATION OF hFE

Rank

Range

MARK2I0N1G2-06

2012-0

L

120-220

H

220-475

CS

WILLAS ELECTRONIC CO

WILLAS ELECTRONIC CORP.

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