ADUC812(1999) 데이터 시트보기 (PDF) - Analog Devices
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ADUC812 Datasheet PDF : 31 Pages
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ADuC812–SPECIFICATIONS1, 2
Parameter
DIGITAL OUTPUTS
Output High Voltage (VOH)
Output Low Voltage (VOL)
ALE, PSEN, Ports 0 and 2
Port 3
Floating State Leakage Current
Floating State Output Capacitance
ADuC812BS
VDD = 5 V
VDD = 3 V
2.4
4.0
2.6
0.4
0.2
0.2
0.4
0.2
0.2
± 10
±5
±5
10
10
Units
V min
V typ
V max
V typ
V max
V typ
µA max
µA typ
pF typ
Test Conditions/Comments
VDD = 4.5 V to 5.5 V
ISOURCE = 80 µA
VDD = 2.7 V to 3.3 V
ISOURCE = 20 µA
ISINK = 1.6 mA
ISINK = 1.6 mA
ISINK = 8 mA
ISINK = 8 mA
POWER REQUIREMENTS13, 14, 15
IDD Normal Mode16
42
32
16
26
12
8
3
IDD Idle Mode
25
18
17
15
6
IDD Power-Down Mode17
7
2
50
50
5
5
mA max
mA typ
mA typ
mA typ
mA max
mA typ
mA typ
mA typ
µA max
µA typ
MCLKIN = 16 MHz
MCLKIN = 16 MHz
MCLKIN = 12 MHz
MCLKIN = 1 MHz
MCLKIN = 16 MHz
MCLKIN = 16 MHz
MCLKIN = 12 MHz
MCLKIN = 1 MHz
NOTES
1Specifications apply after calibration.
2Temperature range –40°C to +85°C.
3Linearity is guaranteed during normal MicroConverter Core operation.
4Linearity may degrade when programming or erasing the 640 Byte Flash/EE space during ADC conversion times due to on-chip charge pump activity.
5Measured in production at VDD = 5 V after Software Calibration Routine at +25°C only.
6User may need to execute Software Calibration Routine to achieve these specifications, which are configuration dependent.
7The offset and gain calibration spans are defined as the voltage range of user system offset and gain errors that the ADuC812 can compensate.
8SNR calculation includes distortion and noise components.
9The temperature sensor will give a measure of the die temperature directly, air temperature can be inferred from this result.
10DAC linearity is calculated using:
reduced code range of 48 to 4095, 0 to VREF range
reduced code range of 48 to 3995, 0 to VDD range
DAC output load = 10 kΩ and 50 pF.
11Flash/EE Memory Performance Specifications are qualified as per JEDEC Specification A103 (Data Retention) and JEDEC Draft Specification All7 (Endurance).
12Endurance Cycling is evaluated under the following conditions:
Mode
= Byte Programming, Page Erase Cycling
Cycle Pattern
= 00Hex to FFHex
Erase Time
= 20 ms
Program Time
= 100 µs
13IDD at other MCLKIN frequencies is typically given by:
Normal Mode (VDD = 5 V): IDD = (1.6 × MCLKIN) + 6
Normal Mode (VDD = 3 V): IDD = (0.8 × MCLKIN) + 3
Idle Mode (VDD = 5 V):
IDD = (0.75 × MCLKIN) + 6
Idle Mode (VDD = 3 V):
IDD = (0.25 × MCLKIN) + 3
Where MCLKIN is the oscillator frequency in MHz and resultant I DD values are in mA.
14IDD Currents are expressed as a summation of analog and digital power supply currents during normal MicroConverter operation.
15IDD is not measured during Flash/EE program or erase cycles; IDD will typically increase by 10 mA during these cycles.
16Analog IDD = 2 mA (typ) in normal operation (internal VREF, ADC and DAC peripherals powered on).
17EA = Port0 = DVDD, XTAL1 (Input) tied to DVDD, during this measurement.
Typical specifications are not production tested, but are supported by characterization data at initial product release.
Specifications subject to change without notice.
Please refer to User Guide, Quick Reference Guide, Application Notes and Silicon Errata Sheet at www.analog.com/microconverter for additional information.
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REV. 0
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