APT8030LVFR 데이터 시트보기 (PDF) - Microsemi Corporation

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APT8030LVFR

POWER MOS V® FREDFET

Microsemi Corporation 

200

100

50

OPERATION HERE

LIMITED BY RDS (ON)

10µS

100µS

10

5

1

.5

TC =+25°C

TJ =+150°C

SINGLE PULSE

1mS

10mS

100mS

DC

.1

1

5 10

50 100

800

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

20

ID = ID [Cont.]

VDS=100V

16

VDS=250V

12

VDS=400V

8

4

0

0 100 200 300 400 500 600

Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

30,000

APT8030LVFR

10,000

Ciss

5,000

1,000

500

Coss

Crss

100

.01

.1

1

10

50

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

200

100

TJ =+150°C TJ =+25°C

50

10

5

1

0

0.4

0.8 1.2

1.6

2.0

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-264 Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

19.51 (.768)

20.50 (.807)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

2.29 (.090)

2.69 (.106)

Gate

Drain

Source

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

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