AS28C010 데이터 시트보기 (PDF) - Austin Semiconductor

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AS28C010

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS28C010

PAGE WRITE CYCLE

OE\*

CE\

WE\

ADDRESS **

tWP

tBLC

tWPH

I/O

LAST BYTE

BYTE 0 BYTE 1

BYTE 2

BYTE n

BYTE n+1 BYTE n+2

* Between successive byte writes within a page write operation, OE\ can bee strobed LOW: e.g. this can be done with CE\ and WE\

HIGH to fetch data from another memory device within the system for the next write; or with WE\ HIGH and CE\ LOW effectively

performing a polling operation.

**: 1- For each successive write within the page write operation A8-A16 should be the same or writes to an unknown address could occur.

2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform

to either CE\ or WE\ controlled write cycle timing.

AS28C010

Rev. 1.5 5/06

10

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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