AS29F010 데이터 시트보기 (PDF) - Alliance Semiconductor

부품명

상세내역

제조사

AS29F010

5V 128K x 8 CMOS Flash EEPROM

Alliance Semiconductor 

$65<)343

®

)XQFWLRQDO#GHVFULSWLRQ

The AS29F010 is a high performance 1 megabit 5 volt-only Flash memory organized as 128K bytes of 8 bits each. It is divided into four

sectors of 32K bytes each. Each sector is separately erased and programmed without affecting data in the other sectors. All prog ram, erase,

and verify operations are 5-volt only, and require no external 12V supply pin. All required features for in-system programmability are

provided.

The AS29F010 provides high performance with a maximum access time of 120, or 150 ns. Chip Enable ( CE), Output Enable (OE), and

Write Enable (WE) pins allow easy interface with the system bus.

Program, erase, and verify operations are controlled with an on-chip command register using a JEDEC standard Write State Machine

approach to enter commands. Each command requires four write cycles to be executed. Address and data are latched internally during all

write, erase, and verify operations, and an internal timer terminates each command. The chip has a typical timer period of 200 µ s for all

commands but Erase, which has a typical period of 800 ms. Under nominal conditions, a sector can be completely programmed and verified

in less than 12 seconds. To program, erase, and verify a sector typically takes less than 18 seconds.

Data protection is provided by a low-VCC lockout and by error checking in the Write State Machine. DATA polling and Toggle Bit modes are

used to show that the chip is executing a command when the AS29F010 is read during a write or erase operation. After Erase or P ogram

commands,Verify-1 andVerify-0 command modes ensure sufficient margin for reliable operation. (See command summary on page 5.)

The AS29F010 is packaged in 32-pin DIP, PLCC and TSOP packages with JEDEC standard pinouts for one megabit Flash memories.

$UUD\#DUFKLWHFWXUH#DQG#GDWD#SRODULW\

The array consists of 128K (131,072) bytes divided into four sectors of 32K bytes each. Addresses A15 and A16 select the four sectors:

Sector

Address range

Address pins

Function

0

00000h–07FFFh

A0–A5

CA: Column addresses 00–3Fh

1

08000h–0FFFFh

2

10000h–17FFFh

3

18000h–1FFFFh

A6–A14

A15–A16

RA: Row addresses 000–1FFh

SA: Sector addresses 0–3h

The AS29F010 is shipped in the erased state with all bits set to 1. Programmed bits are set to 0. Data is programmed into the a ray one byte

at a time. All programmed bits remain set to 0 until the sector is erased and verified using the SectorErase and Verify algorit hm. Erase returns

all bytes in a 32K sector to the erased state FFh, or all bits set to 1. Each sector is erased individually with no effect on the other sectors.

2SHUDWLQJ#PRGHV

The AS29F010 is controlled by a Write State Machine (WSM) that interprets and executes commands. At power-up the WSM is reset to

normal read mode. Once a command is initiated by writing data into the DQ pins with the WE pin, the WSM enters the command mode and

keeps the chip powered up until the command is finished. After the command is terminated by the internaltimer, the WSM returns to the

normal read mode.

5

$//,$1&(#6(0,&21'8&725

','#4407333:0$1#72:233

Share Link: