AS4SD4M16 데이터 시트보기 (PDF) - Austin Semiconductor
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AS4SD4M16 Datasheet PDF : 50 Pages
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Austin Semiconductor, Inc.
SDRAM
AS4SD4M16
PIN DESCRIPTION
TSOP
PIN NUMBERS
SYMBOL
38
CLK
TYPE
DESCRIPTION
Input Clock: CLK is driven by the system clock. All SDRAM input signals are
sampled on the positive edge of CLK. CLK also increments the internal burst
counter and controls the output registers.
37
CKE
Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE POWER-DOWN and SELF
REFRESH operations (all banks idle), ACTIVE POWER-DOWN (row ACTIVE
in either bank) or CLOCK SUSPEND operation (burst/access in progress).
CKE is synchronous except after the device enters power-down and self
refresh modes, where CKE becomes asynchronous until after exiting the
same mode. The input buffers, including CLK, are disabled during power-down
and self refresh modes, providing low standby power. CKE may be tied
HIGH.
19
CS\
Input Chip Select: CS\ enables (registered LOW) and disables (registered HIGH)
the command decoder. All commands are masked when CS\ is registered
HIGH. CS\ provides for external bank selection on systems with multiple
banks. CS\ is considered part of the command code.
16, 17
18
WE\, CAS\ Input Command Inputs: RAS\, CAS\, and WE\ (along with CS\) define the
RAS\
command being entered.
15, 39
DQML,
DQMH
Input
Input/Output Mask: DQM is an input mask signal for write accesses and an
output enable signal for read accesses. Input data is masked when DQM is
sampled HIGH during a WRITE cycle. The output buffers are placed in a
High-Z state (two-clock latency) when DQM is sampled HIGH during a READ
cycle. DQML corresponds to DQ0-DQ7; DQMH corresponds to DQ8-DQ15.
DQML and DQMH are considered same state when referenced as DQM.
20, 21
BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank the ACTIVE, READ,
WRITE or PRECHARGE command is being applied.
23-26, 29-34,
22, 35
A0-A11
Input
Address Inputs: A0-A11 are sampled during the ACTIVE command (row
address A0-A11) and READ/WRITE command (column address A0-A7, with
A10 defining AUTO PRECHARGE) to select one location out of the memory
array in the respective bank. A10 is sampled during a PRECHARGE
command to determine if all banks are to be precharged (A10 HIGH) or bank
selected by BA0,BA1 (LOW). The address inputs also provide the op-code
during a LOAD MODE REGISTER command.
2, 4, 5, 7, 8
10, 11, 13, 42
44, 45, 47, 48
50, 51, 53
DQ0- DQ15 Input/ Data I/O: Data bus.
Output
36, 40
NC
— No Connect: These pins should be left unconnected.
3, 9, 43, 49
6, 12, 46, 52
1, 14, 27
28, 41, 54
VDDQ
VSSQ
VDD
VSS
Supply DQ Power: Provide isolated power to DQs for improved noise immunity.
Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.
Supply Power Supply: +3.3V ±0.3V.
Supply Ground.
AS4SD4M16
Rev. 1.5 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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