AS8E512K8 데이터 시트보기 (PDF) - Austin Semiconductor
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AS8E512K8 Datasheet PDF : 13 Pages
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Austin Semiconductor, Inc.
EEPROM
AS8E512K8
PAGE MODE CHARACTERISTICS
PARAMETER
SYMBOL MIN
Address, OE\ Setup Time
tAS, tOES
10
Address Hold Time
tAH
50
Chip Select Setup Time
tCS
0
Chip Select Hold Time
tCH
0
Write Pulse Width (WE\ or CE\)
tWP
100
Data Setup Time
tDS
50
Data, OE\ Hold Time
tDH, tOEH
10
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
PAGE MODE WRITE WAVEFORMS(1,2,3)
OE\
?CE\
tWPH
tBLC
WE\
tWP
tAS
tAH
A0-A18 VALID ADDR
t
DS
tDH
DATA
VALID DATA
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE 126
NOTES: 1. A7 through A16 must specify the page address during each high to low transition of ?W/E (or ?C/E).
2. ?O/E must be high only when ?W/E and ?C/E are both low.
3. A17 and A18 must remain valid throughout the WE\ and CE\ low.
BYTE 127
t
WC
CHIP ERASE WAVEFORMS
CE\
VIH
VIL
NOTES:
tS = 5µsec (min)
tW= tH= 10 msec (min)
V =12.0 V +/- 0.5 V
H
AS8E512K8
Rev. 3.1 6/05
V
H
?OE\
VIH
V
?WE\
IH
VIL
tS
tH
tw
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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