AT-42035 데이터 시트보기 (PDF) - Avago Technologies
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AT-42035 Datasheet PDF : 5 Pages
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AT-42035
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
AvagoTechnologies' AT-42035isageneralpurposeNPNbipo-
lartransistorthatoffersexcellenthigh f requencyperformance.
The AT‑42035 is housed in a cost effective surface mount 100
mil micro-X package. The 4 micron emitter-to-emitter pitch
enables this transistor to be used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium
sized transistor with impedances that are easy to match for low
noise and medium power applications. This device is designed
for use in low noise, wideband amplifier, mixer and oscilla-
tor applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
Features
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Cost Effective Ceramic Microstrip Package
35 micro-X Package
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