AT-42035 데이터 시트보기 (PDF) - Avago Technologies

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AT-42035

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Avago Technologies 

AT-42035 Absolute Maximum Ratings [1]

Symbol

Parameter

Absolute

Units

Maximum

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

Junction Temperature

Storage Temperature[4]

V

1.5

V

20

V

12

mA

80

mW

600

°C

150

°C

-65 to 150

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. Tcase = 25°C.

3. Derate at 5.7 mW/°C for Tc > 95°C.

4. Storage above +150°C may tarnish the leads of this package making it difficult to

solder into a circuit.

5. The small spot size of this technique results in a higher, though more accurate

determination of θjc than do alternate methods. See MEASUREMENTS section

“Thermal Resistance” for more information.

Thermal Resistance [2,5]:

θjc = 175°C/W

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions[1]

Units Min. Typ. Max.

|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

dB 10.0 11.0

f = 4.0 GHz

5.0

P1 dB

Power Output @ 1 dB Gain Compression

VCE = 8 V, IC = 35 mA

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

dBm

21.0

f= 4.0 GHz

20.5

f = 2.0 GHz

dB

14.0

f = 4.0 GHz

9.5

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 2.0 GHz

dB

2.0

f = 4.0 GHz

3.0

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHz

dB

13.5

f = 4.0 GHz

10.0

fT

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

ICBO

Collector Cutoff Current; VCB = 8 V

IEBO

Emitter Cutoff Current; VEB = 1 V

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

GHz

8.0

—

30

150 270

µA

0.2

µA

2.0

pF

0.28

Notes:

1. For this test, the emitter is grounded.



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