BAP50-02 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAP50-02 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAP50-02
General purpose PIN diode
7 Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
ISL
isolation
Lins
insertion loss
τL
charge carrier life time
LS
series inductance
Conditions
IF = 50 mA
IR = 10 μA
VR = 50 V
f = 1 MHz (see Figure 1)
VR = 0 V
VR = 1 V
VR = 5 V
f = 100 MHz (see Figure 2)
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
VR = 0 V (see Figure 4)
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
See Figure 3
IF = 0.5 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 1 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 10 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
when switched from IF = 10 mA
to IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Min Typ Max Unit
-
0.95 1.1 V
50
-
-
V
-
-
100 nA
-
0.4 -
pF
-
0.3 0.55 pF
-
0.22 0.35 pF
[1] -
25
40
Ω
[1] -
14
25
Ω
[1] -
3
5
Ω
-
20.4 -
dB
-
17.3 -
dB
-
15.5 -
dB
-
1.74 -
dB
-
1.79 -
dB
-
1.88 -
dB
-
1.03 -
dB
-
1.09 -
dB
-
1.15 -
dB
-
0.26 -
dB
-
0.32 -
dB
-
0.34 -
dB
-
1.05 -
μs
-
0.6 -
nH
BAP50-02
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2018
© NXP B.V. 2018. All rights reserved.
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