BAS116 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS116

Low-leakage diode

NXP Semiconductors. 

NXP Semiconductors

Low-leakage diode

Product data sheet

BAS116

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

VR = 75 V

VR = 75 V; Tj = 150 °C

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

TYP. MAX. UNIT

−

0.9 V

−

1

V

−

1.1 V

−

1.25 V

0.003 5

nA

3

80 nA

2

−

pF

0.8 3

µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-tp)

Rth(j-a)

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

Note

1. Device mounted on an FR4 printed-circuit board.

VALUE

330

500

UNIT

K/W

K/W

2003 Dec 12

3

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