BAS116 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAS116 Datasheet PDF : 8 Pages
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NXP Semiconductors
Low-leakage diode
Product data sheet
BAS116
102
IR
(nA)
10
(1)
mlb754
1
10−1
10−2
(2)
10−3
0
50
(1) Maximum values.
(2) Typical values.
VR = 75 V.
100
150
200
Tj (°C)
Fig.5 Reverse current as a function of junction
temperature.
2
handbook, halfpage
Cd
(pF)
1
MBG526
0
0
5
10
15 VR (V) 20
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 1 mA.
2003 Dec 12
Fig.7 Reverse recovery time test circuit and waveforms.
5
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