Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
부품명
상세내역
BAS316 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
부품명
상세내역
제조사
BAS316
Silicon Epitaxial Planar Diode
Galaxy Semi-Conductor
BAS316 Datasheet PDF : 4 Pages
1
2
3
4
Production specification
Silicon Epitaxial Planar Diode
BAS316
ELECTRICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Characteristic
Symbol Min
Max
Unit
Test Condition
Reverse Breakdown Voltage
V
(BR)R
100
-
V
I
R
=100μA
Forward Voltage
V
F
Reverse Current
I
R
Capacitance between terminals C
T
Reverse Recovery Time
t
rr
0.715 V
0.855
1.0
1.25
-
1.0
μA
0.03
-
1.5
pF
-
4.0
ns
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=25V
V
R
=0,f=1.0MHz
I
F
=I
R
=10mA,R
L
=100Ω
TYPICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
B013
Rev.B
www.gmesemi.com
2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]