BAS40-04 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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BAS40-04

Surface mount schottky barrier diode

Galaxy Semi-Conductor 

Production specification

Surface mount schottky barrier diode

BAS40/-04/-05/-06

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

Symbol Min Typ MAX

V(BR)R

VF

40 -

-

-

-

380

1000

IR

-

20 200

Cj

-

4.0 5.0

trr

-

-

5.0

UNIT

V

mV

nA

pF

ns

Test Condition

IRS= 10μA

tP<300μs,IF=1.0mA

tP<300μs,IF=40mA

tP<300μs,VR=30V

VR=0V,f=1.0MHz

IF=IR=10mA to

IR=1.0mA,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C029

Rev.A

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