BAS81 데이터 시트보기 (PDF) - Philips Electronics

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BAS81

Schottky barrier diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier diodes

Product specification

BAS81; BAS82; BAS83

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD

package

• Low diode capacitance.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an

integrated protection ring against

static discharges. This surface

mounted diode is encapsulated in a

hermetically sealed SOD80C glass

SMD package with tin-plated metal

discs at each end. It is suitable for

“automatic placement” and as such it

can withstand immersion soldering.

handbook, halfpage

k

a

MAM190

Cathode indicated by a grey band.

Fig.1 Simplified outline (SOD80C), pin configuration and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VR

continuous reverse voltage

BAS81

BAS82

BAS83

IF

continuous forward current

IFRM

repetitive peak forward current

tp ≤ 1 s; δ ≤ 0.5

IFSM

non-repetitive peak forward current

tp = 1 s

Tstg

storage temperature

Tj

junction temperature

MIN. MAX. UNIT

−

40

V

−

50

V

−

60

V

−

30

mA

−

150

mA

−

500

mA

−65

+150 °C

−

125

°C

1998 Jun 24

2

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