BAT17 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAT17

Schottky barrier diode

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier diode

Product data sheet

BAT17

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

rD

diode forward resistance

Cd

diode capacitance

F

noise figure

CONDITIONS

see Fig.2

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

VR = 3 V; see Fig.3

VR = 3 V; Tamb = 60 °C; see Fig.3

f = 1 kHz; IF = 5 mA

f = 1 MHz; VR = 0; see Fig.4

f = 900 MHz; note 1

MAX.

UNIT

350

mV

450

mV

600

mV

0.25

μA

1.25

μA

15

Ω

1

pF

8

dB

Note

1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOT23 standard mounting conditions.

CONDITIONS

VALUE

500

UNIT

K/W

2003 Mar 25

3

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