BAT854CW 데이터 시트보기 (PDF) - KEXIN Industrial
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BAT854CW Datasheet PDF : 1 Pages
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SMD Type
Schottky barrier (double) diodes
BAT854W;BAT854AW
BAT854CW;BAT854SW
Diodes
Features
Very low forward voltage
Very low reverse current
Guard ring protected
Very small SMD package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Continuous reverse voltage
VR
Continuous forward current
IF
Repetitive peak forward current
IFRM
tp 1 s; d 0.5
Non-repetitive peak forward current
IFSM t = 8.3 ms half sinewave;JEDEC method
Storage temperature
Tstg
-65
Junction temperature
Tj
Operating ambient temperature
Tamb
-65
Thermal resistance from junction to ambient Rth j-a
Max
Unit
40
V
200
mA
300
mA
1
A
+150
150
+150
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Continuous reverse current
IR
Diode capacitance
Cd
Note
1. Pulse test: tp 300 s; ä 0.02.
Conditions
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V; Note 1
f = 1 MHz; VR = 1 V
Typ
Max
Unit
200
260
340
mV
420
550
0.5
A
20
pF
Marking
Type
Marking
BTA854W
81
BAT854AW
82
BAT854CW
83
BAT854SW
84
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