BAV70 데이터 시트보기 (PDF) - KEC
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BAV70 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES
·Small Package : SOT-23.
·Low Forward Voltag : VF=0.9V(Typ.).
·Fast Reverse Recovery Time : trr=1.6ns(Typ.).
·Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
VRM
85
VR
80
IF
250
IFSM
2
225*
PD
300**
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)
UNIT
V
V
mA
A
mW
℃
℃
BAV70
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
Type Name
H7
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR
CT
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
-
-
MAX.
-
-
1.25
0.5
3.0
4.0
UNIT
V
μA
pF
nS
2009. 1. 23
Revision No : 1
1/2
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