BAV99 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
부품명
상세내역
제조사
BAV99 Datasheet PDF : 3 Pages
| |||
Production specification
Dual series switching diode
BAV99
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Typical
V(BR)
IR
VF
CD
trr
Test conditions
IR=2.5μA
VR=20V
VR=75V
VR=25V Tj=150℃
VR=75V Tj=150℃
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V f=1MHz
IF=IR=10mA,
Irr=0.1×IR,RL=100Ω
MIN
75
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
MAX
25
2.5
30
50
715
855
1000
1250
2.0
4.0
UNIT
V
nA
μA
μA
μA
mV
pF
nS
C037
Rev.A
www.gmesemi.com
2
Share Link: 