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BAV99 데이터 시트보기 (PDF) - Philips Electronics

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BAV99
Philips
Philips Electronics Philips
BAV99 Datasheet PDF : 12 Pages
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Philips Semiconductors
High-speed double diode
Product specification
BAV99
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The BAV99 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
handbook, halfpa2ge
1
2
3
1
3
MAM232
Marking code: A7p = made in Hong Kong; A7t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
65
MAX.
85
75
215
125
450
4
1
0.5
250
+150
150
UNIT
V
V
mA
mA
mA
A
A
A
mW
°C
°C
1999 May 11
2

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