BAV70T 데이터 시트보기 (PDF) - TY Semiconductor

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BAV70T

Switching Diode

TY Semiconductor 

Product specification

BAS16T;BAW56T

BAV70T;BAV99T

Features

Absolute Maximum Ratings Ta = 25

Parameter

Power dissipation

(Ta mb=25 )

Forward Current

Reverse Voltage

Operating and storage junction temperature range

SOT-523

1.6+0.1

-0.1

1.0+0.1

-0.1

0.2+0.05

-0.05

2

1

Unit: mm

0.1+0.01

-0.01

3

0.5+0.1

-0.1

0.3+0.25

-0.05

1. Base

2. Emitter

3. Collecter

Symbol

PD

IF

VR

TJ, Tstg

Limits

150

75

85

-55 to +150

Unit

mW

mA

V

Electrical Characteristics Ta = 25

P aram eter

Reverse breakdown voltage

Sym bol

V(BR)

Reverse voltage leakage current

IR

Forward voltage

VF

Diode capacitance

CD

Reverse recovery time

trr

Conditions

IR = 100 A

VR =75 V

VR =25 V

IF =1 mA

IF =10 mA

IF = 50 mA

IF =150 mA

VR=0 V,f=1MHz

Min

Max

Unit

85

V

2

A

0.03

715

855

mV

1000

1250

1.5

pF

4

ns

Marking

Type

Marking

BAS16T

A2

BAW56T

JD

BAV70T

JJ

BAV99T

JE

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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