BAW56 데이터 시트보기 (PDF) - Philips Electronics

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BAW56

High-speed double diode

Philips Electronics 

Philips Semiconductors

High-speed double diode

Product specification

BAW56

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

MAX.

UNIT

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

715

mV

855

mV

1

V

1.25

V

VR = 25 V

30

nA

VR = 75 V

1

µA

VR = 25 V; Tj = 150 °C

30

µA

VR = 75 V; Tj = 150 °C

50

µA

f = 1 MHz; VR = 0; see Fig.6

2

pF

when switched from IF = 10 mA to 4

ns

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

when switched from IF = 10 mA; 1.75

V

tr = 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

360

500

UNIT

K/W

K/W

1999 May 11

3

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