BAY80-TR(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAY80-TR Datasheet PDF : 5 Pages
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BAY80
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 150 mA
Reverse current
VR = 120 V
VR = 120 V, Tj = 150 °C
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
Diode capacitance
VR = 0, f = 1 MHz
Differential forward resistance IF = 10 mA
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA,
RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
Scattering Limit
10
1
0.1
VR = VRRM
0.01
0
94 9084
40
80 120 160 200
Tj - Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
Symbol
Min
VF
400
VF
630
VF
730
VF
780
VF
IR
IR
V(BR)
150
CD
rf
trr
Typ.
Max
Unit
520
mV
780
mV
920
mV
1000
mV
1070
mV
100
nA
100
µA
V
1.5
5
pF
5
Ω
50
ns
1000
100
Tj = 25 °C
10
1
0.1
1
10
100
94 9089
IF - Forward Current (mA)
Figure 3. Differential Forward Resistance vs. Forward Current
1000
Tj = 25 °C
100
10
Scattering Limit
1
0.1
0
94 9085
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 85553
Rev. 1.8, 19-Feb-07
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