BC309C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BC309C Datasheet PDF : 5 Pages
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Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
IC= -2mA, IB=0
BVCES
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
IC= -10µA, VBE=0
BVEBO
ICES
hFE
VCE (sat)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC307
: BC308/309
DC Current Gain
Collector-Emitter Saturation Voltage
VBE (sat) Collector-Base Saturation Voltage
VBE (on)
fT
Cob
Cib
NF
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
: BC307/308
: BC309
: BC309
IE= -10µA, IC=0
VCE= -45V, VBE=0
VCE= -25V, VBE=0
VCE= -5V, IC= -2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA, f=50MHz
VCB= -10V, IE=0, f=1MHz
VEB= -0.5V, IC=0, f=1MHz
VCE= -5V, IC= -0.2mA,
RG=2KΩ, f=1KHz
VCE= -5V, IC= -0.2mA
RG=2KΩ, f=30~15KHz
Min.
-45
-25
-50
-30
-5
120
-0.55
Typ.
-2
-2
-0.5
-0.7
-0.85
-0.62
130
12
2
Max.
-15
-15
800
-0.3
-0.7
6
10
4
4
Units
V
V
V
V
V
nA
nA
V
V
V
V
V
MHz
pF
pF
dB
dB
dB
hFE Classification
Classification
hFE
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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