BC307,B,C BC308C BC309B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
hFE
BC307B/309B
BC307C/308C
—
150
—
—
270
—
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC307
BC308C
120
—
800
120
—
800
(IC = –100 mAdc, VCE = –5.0 Vdc)
BC307B/309B
BC307C/308C
200
290
460
420
500
800
BC307B/309B
BC307C/308C
—
180
—
—
300
—
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat)
—
—
—
–0.10
–0.3
–0.30
–0.6
–0.25
—
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
—
–0.7
—
—
–1.0
—
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
–0.55
–0.62
–0.7
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
BC307
BC308C
BC309B
fT
—
280
—
—
320
—
—
360
—
Common Base Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Ccbo
—
—
6.0
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)
BC309
BC307
BC308C
BC309B
NF
—
2.0
4.0
—
2.0
10
—
2.0
10
—
2.0
4.0
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.
Unit
—
Vdc
Vdc
Vdc
MHz
pF
dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data