BC327 데이터 시트보기 (PDF) - Unisonic Technologies

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BC327

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

BC327/328

PNP EPITAXIAL SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-emitter voltage

BC327

BC328

VCES

-50

-30

V

V

Collector-emitter voltage

BC327

BC328

VCEO

-45

-25

V

V

Emitter-base voltage

Collector current (DC)

VEBO

-5

V

IC

-800

mA

Collector dissipation

Junction Temperature

PC

625

mW

TJ

125

°С

Operating Temperature

Storage Temperature

TOPR

-20 ~ +85

°С

TSTG

-40 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

Collector-emitter breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cut-off Current

BC327

BC328

BC327

BC328

BC327

BC328

DC current gain

Collector-emitter saturation voltage

Base-emitter on voltage

Current gain bandwidth product

Output Capacitance

 CLASSIFICATION OF hFE

SYMBOL TEST CONDITIONS MIN

BVCEO IC=-10mA, IB=0

-45

-25

BVCES IC=-0.1mA, VBE=0

-50

-30

BVEBO IE=-10mA, IC=0

-5

ICES

VCE=-45V, IB=0

VCE=-25V, IB=0

hFE1

VCE=-1V, IC=-100mA

100

hFE2

VCE=-1V, IC=-300mA

40

VCE(SAT) IC=-500mA, IB=-50mA

VBE(ON) VCE=-1V, IC=-300mA

fT

VCE=-5V, IC=-10mA,

f=20MHz

Cob

VCB=-10V, IE=0, f=1MHz

TYP

-2

-2

100

12

MAX

-100

-100

630

UNIT

V

V

V

V

V

V

V

-0.7 V

-1.2 V

MHz

pF

RANK

hFE1

hFE2

16

100-250

60~

25

160-400

100~

40

250-630

170~

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R201-038.B

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