BC368 데이터 시트보기 (PDF) - ON Semiconductor
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BC368 Datasheet PDF : 4 Pages
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BC368 (NPN), BC369 (PNP)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
20
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mA, IE = 0 )
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
V(BR)CBO
25
−
−
Vdc
V(BR)EBO
5.0
−
−
Vdc
ICBO
IEBO
−
−
10
mAdc
−
−
1.0
mAdc
−
−
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
Collector−Emitter Saturation Voltage
(IC = 1.0 A, IB = 100 mA)
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 1.0 V)
hFE
BC368, 369
BC368−25
fT
−
50
−
−
85
−
375
170
−
375
60
−
−
65
−
−
MHz
VCE(sat)
−
−
0.5
V
VBE(on)
−
−
1.0
V
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